High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation
- 1 May 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 555-558
- https://doi.org/10.1007/bf02666502
Abstract
No abstract availableKeywords
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