High electron mobility pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure on InP grown by flux-stabilized MBE
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 509-514
- https://doi.org/10.1016/0022-0248(91)90795-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- 60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTsIEEE Electron Device Letters, 1991
- Surface segregation of third-column atoms in III–V ternary arsenidesJournal of Crystal Growth, 1989
- X-Ray Diffraction Study of Inalas-Ingaas on Inp High Electron Mobility Transistor Structure Prepared by Molecular-Beam EpitaxyMRS Proceedings, 1989
- Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility TransistorsMRS Proceedings, 1989
- I n s i t u measurement of the composition of molecular-beam epitaxial (Al, Ga)As by Auger electron spectroscopyJournal of Vacuum Science & Technology B, 1988
- Elimination of the flux transients from molecular-beam epitaxy source cells following shutter operationJournal of Vacuum Science & Technology B, 1988
- Improvements to and characterization of GaInAs/AlInAs heterointerfaces grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxyJournal of Crystal Growth, 1987
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985