Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Ka-band high power pseudomorphic heterostructure FETElectronics Letters, 1989
- Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structuresApplied Physics Letters, 1988
- Stability of strained quantum-well field-effect transistor structuresIEEE Electron Device Letters, 1988
- Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructuresJournal of Applied Physics, 1988
- Photoluminescence line shape in degenerate semiconductor quantum wellsPhysical Review B, 1988
- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988
- Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energeticsJournal of Vacuum Science & Technology B, 1988
- GaAs power MESFET with 41-percent power-added efficiency at 35 GHzIEEE Electron Device Letters, 1988
- A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffractionJournal of Vacuum Science & Technology B, 1987