60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (1) , 23-25
- https://doi.org/10.1109/55.75686
Abstract
V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) were fabricated with an indium mole fraction of 28% in the InGaAs channel. A device with 0.15- mu m T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz.<>Keywords
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