Shallow implants into GaAs
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 388-391
- https://doi.org/10.1016/s0168-583x(87)80076-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Very short gate-length GaAs MESFET'sIEEE Electron Device Letters, 1985
- Analytical models of ion-implanted GaAs FET'sIEEE Transactions on Electron Devices, 1985
- Improved short-channel GaAs MESFET's by use of higher doping concentrationIEEE Transactions on Electron Devices, 1984
- Dynamic Performance of Schottky-barrier Field-effect TransistorsIBM Journal of Research and Development, 1970