Photoluminescence study of (111)-oriented GaAs/GaAsP strained-layer quantum well structure
- 21 March 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (12) , 1555-1557
- https://doi.org/10.1063/1.111991
Abstract
A GaAs/GaAs1−xPx (x=0.13) strained-layer quantum well structure has been grown on (111)B-oriented GaAs substrate by means of low-pressure (60 Torr) metalorganic vapor phase epitaxy and characterized by photoluminescence (PL) spectroscopy. Despite the partial relaxation of the tensile strain confined in the GaAsP barrier layers, our sample exhibits smooth surface morphology and intense optical emission. Moreover, an evident blue shift of the excitonic transition peak attributed to the screening of the strain-induced internal electric field by the photoexcited carriers, has been observed in the PL measurement.Keywords
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