Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs1-xPx Strained-Barrier Single Quntum Well Structures
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3B) , L375
- https://doi.org/10.1143/jjap.32.l375
Abstract
GaAs/GaAs1-x P x (x=0.15, 0.20, 0.22) single quantum wells which involve tensile-strained GaAs1-x P x barrier layers have been grown on GaAs substrates by metal-organic vapor phase epitaxy (MOVPE) and characterized by double-crystal X-ray diffration, photoluminescence (PL), and Fourier-transform reflectance spectroscopy (FT-RS). Despite the relatively large relaxation ratio of the strain (sometimes as high as 7.5%), these structures exihibit smooth surface morphology ass well as intense and narrow excitonic emissions. The composition-dependent energy band offset ratios for the GaAs/GaAs1-x P x strained-barrier single quantum well structures have also been determined.Keywords
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