Properties of thin strained Ga(As,P) layers

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Abstract
In this paper we present results of studies on samples, grown by metal-organic vapor-phase epitaxy, containing a single layer of Ga(As,P) in between GaP. Investigations of these samples were carried out by means of photoluminescence at 2 K and the results are confronted with calculations using deformation-potential theory. It is shown that strain effects decrease the band-gap energy of the layers and that good agreement can be obtained between theory and experiment. Finally, we discuss quantum size shifts and increased phonon coupling which occur for thin wells (̊).