Disorder-induced Anderson localization in GaAs1−xPx

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31 December 1984

journal article
Published by Elsevier in Solid State Communications

Vol. 52 (9) , 789-792
https://doi.org/10.1016/0038-1098(84)90006-1

Abstract

No abstract available

This publication has 5 references indexed in Scilit:

Photoluminescence study of excitons localized in indirect-gap $Ga {As}_{1 - x} P_{x}$
Physical Review B, 1984
Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductor $Cd S_{x} {Se}_{1 - x}$
Physical Review B, 1982
Evidence for Exciton Localization by Alloy Fluctuations in Indirect-Gap $Ga {As}_{1 - x} P_{x}$
Physical Review Letters, 1980
Resonant excitation of bound exciton luminescence in GaAs1−xPx alloys
Solid State Communications, 1979
A new interimpurity recombination in GaP; revised values for acceptor binding energies
Applied Physics Letters, 1978