The development of II–VI semiconductors for blue diode lasers and optoelectronic devices
- 30 November 1994
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 25 (8) , 631-641
- https://doi.org/10.1016/0026-2692(94)90129-5
Abstract
No abstract availableKeywords
This publication has 50 references indexed in Scilit:
- Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layersIEEE Photonics Technology Letters, 1994
- Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II-VI heterostructures and devicesApplied Physics Letters, 1993
- Exciton-related lasing mechanism in ZnSe-(Zn,Cd)Se multiple quantum wellsPhysical Review B, 1993
- Structural characterization of GaAs/ZnSe interfacesJournal of Vacuum Science & Technology B, 1988
- Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayersApplied Physics Letters, 1987
- Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxyApplied Physics Letters, 1984
- Stimulated photoluminescence of ZnSeSolid State Communications, 1982
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- Molecular Beam Epitaxy of ZnSe and ZnTe Thin-Film Single CrystalsJapanese Journal of Applied Physics, 1977
- Molecular beam epitaxy of II-VI compoundsJournal of Applied Physics, 1975