A power bipolar junction transistor model describing the static and the dynamic behavior
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The power bipolar junction transistor (PBJT) is studied. The main interest is concentrated on the charge in the collector layer, which dominates the characteristics of the device. Based on the partial differential equations of semiconductor physics, ordinary differential equations for a one-dimensional model are derived for a PBJT with fine cell structure. The equations consider recombination, charging, and discharging processes in the collector layer. A network model for the PBJT is derived by adding these equations to the standard model. The model is implemented in IG-SPICE. The static behavior, like quasi-saturation, and the dynamic behavior, including turn off under a strong drive condition, can be simulated and analyzed. The simulation results correlate well with the measurement.Keywords
This publication has 3 references indexed in Scilit:
- The effects of collector lifetime on the characteristics of high-voltage power transistors operating in the quasi-saturation regionIEEE Transactions on Electron Devices, 1987
- Physical modeling of high-current transients for bipolar transistor circuit simulationIEEE Transactions on Electron Devices, 1987
- A unified circuit model for bipolar transistors including quasi-saturation effectsIEEE Transactions on Electron Devices, 1985