Hall coefficient of thin films in a mean free path model
- 1 November 1978
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 8 (11) , 2357-2365
- https://doi.org/10.1088/0305-4608/8/11/019
Abstract
Defining an effective relaxation time and then using the Boltzmann transport equation, analytical expressions have been derived, in the case of nearly specular scattering on external surfaces (p>or=0.5), for the Hall coefficient and conductivity in thin metallic films subjected to a transverse magnetic field. The results for moderately high magnetic field agree well with previous theoretical works; at low magnetic field the Hall coefficient in thin films is greater than the bulk value RH0 and becomes identical with RH0 in strong magnetic field. The theoretical predictions agree well with experimental data on copper and potassium thin films.Keywords
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