Thin silicon oxides grown by low-temperature rf plasma anodization and deposition
- 20 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (16) , 1095-1097
- https://doi.org/10.1063/1.97929
Abstract
We have studied the low‐temperature (Qox11 charges/cm2, interface state densities Dss13 MV/cm. Finally, we have studied the reduction of fast surface states in the plasma oxides by rapid thermal annealing.Keywords
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