Structure of heteroepitaxial GaAs on Si
- 1 January 1987
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 3 (5) , 515-517
- https://doi.org/10.1016/0749-6036(87)90234-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Structural properties of GaAs on (001) oriented Si and Ge substratesJournal of Applied Physics, 1987
- Biatomic Steps on (001) Silicon SurfacesPhysical Review Letters, 1986
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Substrate-induced strain and orientational ordering in adsorbed monolayersPhysical Review B, 1979