Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential
- 1 November 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (11A) , L1333
- https://doi.org/10.1143/jjap.37.l1333
Abstract
We have controlled the morphology of Cu clusters formed on H-terminated Si(111) surface in solution by controlling Si potential. At a Si potential of -0.70 eV vs SHE, Cu wires of 50 nm width were formed along a ridge composed of dihydride Si atoms at the intersections of steps equivalent to [11\overline2]. In contrast, no Cu morphology was observed along a ravine composed of monohydride Si atoms.Keywords
This publication has 2 references indexed in Scilit:
- Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)Applied Physics Letters, 1995
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) SurfacesJapanese Journal of Applied Physics, 1995