Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6A) , L668
- https://doi.org/10.1143/jjap.34.l668
Abstract
We propose a novel technique for organizing steps on Si surfaces. Arrays of small holes are formed on Si(111) wafers misoriented toward [112̄] by using conventional Si technology. The wafers are then annealed in an ultra-high vacuum at about 1300° C. During the hole filling-in process, steps on the surface are arranged regularly, and finally parallel step bands are ordered after the holes have completely disappeared.Keywords
This publication has 14 references indexed in Scilit:
- Hydrogen annealed silicon-on-insulatorApplied Physics Letters, 1994
- Transient step bunching on a vicinal Si(111) surfacePhysical Review Letters, 1994
- Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1993
- Crossover from metastable to unstable facet growth on Si(111)Physical Review Letters, 1993
- Observation of Hydrogen-Terminated Silicon (111) Surface by Ultrahigh-Vacuum Atomic Force MicroscopyJapanese Journal of Applied Physics, 1993
- Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodesJournal of Vacuum Science & Technology A, 1993
- High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surfacePhysical Review B, 1993
- Step-height mixtures on vicinal Si(111) surfacesPhysical Review Letters, 1992
- Chemical Stability of HF-Treated Si(111) SurfacesJapanese Journal of Applied Physics, 1991
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991