Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications
Open Access
- 1 August 2002
- journal article
- research article
- Published by Wiley in ETRI Journal
- Vol. 24 (4) , 328-331
- https://doi.org/10.4218/etrij.02.0202.0402
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characteristics of p-channel SOI LDMOS Transistor with Tapered Field OxidesETRI Journal, 1999
- Integration of 5-V CMOS and High-Voltage Devices for Display Drive ApplicationsETRI Journal, 1998
- Effects of drift region parameters on the static properties of power LDMOSTIEEE Transactions on Electron Devices, 1981