Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition
- 31 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22) , 2810-2812
- https://doi.org/10.1063/1.109217
Abstract
A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.Keywords
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