Effects of carrier confinement by InGaAs/GaAs heterointerface barrier on deep trap concentration profiling
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (10) , 2158-2164
- https://doi.org/10.1109/16.59904
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Carrier dynamics in quantum wells behaving as giant trapsJournal of Applied Physics, 1987
- GaAs MESFET interface considerationsIEEE Transactions on Electron Devices, 1987
- Theoretical and experimental determination of deep trap profiles in semiconductorsJournal of Applied Physics, 1987
- Investigation of molecular beam epitaxial In0.53Ga0.47As regrown on liquid phase epitaxial In0.53Ga0.47As/InPJournal of Vacuum Science & Technology B, 1986
- A Capacitance Investigation of InGaAs/InP Isotype HeterojunctionJapanese Journal of Applied Physics, 1983
- Transient capacitance spectroscopy on large quantum well heterostructuresJournal of Applied Physics, 1983
- Deep levels in In0.53Ga0.47 As/InP heterostructuresJournal of Applied Physics, 1982
- Stability of performance and interfacial problems in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974