Structure and optical properties of Lu2SiO5:Ce phosphor thin films
- 4 September 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (10)
- https://doi.org/10.1063/1.2345373
Abstract
Luminescent, cerium doped Lu2SiO5 thin films with C2∕c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150°C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200mTorr at 600°C. These conditions reflect a balance between Ce4+∕Ce3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.This publication has 14 references indexed in Scilit:
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