Spin-Lattice Relaxation in Compensatedn-Type Silicon
- 1 May 1966
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 21 (5) , 874-882
- https://doi.org/10.1143/jpsj.21.874
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Determination of Compensation Ratio in Silicon by an Electron Spin Resonance MethodJapanese Journal of Applied Physics, 1965
- Raman Spin-Lattice Relaxation of Shallow Donors in SiliconPhysical Review B, 1963
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Shallow Impurity Traps and Electron Transfer Dynamics in-Type Silicon at Liquid Helium TemperaturesPhysical Review Letters, 1960
- Electron Spin-Lattice Relaxation in Phosphorus-Doped SiliconPhysical Review B, 1960
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1959
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959
- Donor Electron Spin Relaxation in SiliconPhysical Review B, 1957
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- On the interaction of nuclear spins in a crystalline latticePhysica, 1949