Single stacking faults in high-stress deformed semi-insulating GaAs
- 1 October 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 56 (4) , 135-141
- https://doi.org/10.1080/09500838708203761
Abstract
Single intrinsic stacking faults in semi-insulating undoped GaAs have been studied by transmission electron microscopy. The crystals were deformed at room temperature by uniaxial compression and under hydrostatic pressure. It is shown that the stacking faults are produced by the dissociation of 60°(β) dislocations under very high stress (τ≃0·75 GPa). The partial dislocations bounding the stacking faults are systematically 30°(β) in character. These observations are consistent with the classification of mobilities of partial dislocations that had been previously established when studying deformation microtwins in the same material: 30°(β)<30°(α) <90°(α or β).Keywords
This publication has 9 references indexed in Scilit:
- A TEM investigation of the dislocation rosettes around vickers indentation in GaAsPhysica Status Solidi (a), 1987
- High-stress deformation of GaAsPhilosophical Magazine A, 1986
- On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAsMaterials Science Forum, 1986
- Plastic deformation of GaAs single crystals at room temperature and the influence of dopingPhilosophical Magazine A, 1985
- Transmission electron microscopy of semi-insulating Ga As deformed at room temperature and under confining pressureJournal de Physique Lettres, 1985
- Anisotropic deformation behaviour of GaAsPhysica Status Solidi (a), 1984
- MODELS OF THE DISLOCATION STRUCTURELe Journal de Physique Colloques, 1979
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Electron Microscopic Images of Single and Intersecting Stacking Faults in Thick Foils. Part I: Single FaultsPhysica Status Solidi (b), 1963