The electron microscope image contrast near dislocation nodes
- 1 April 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 15 (136) , 797-804
- https://doi.org/10.1080/14786436708220927
Abstract
The elastic displacements due to a screw dislocation node are used to compute the expected electron microscope images of a node when many reflections are operating. It is shown that unextended nodes may appear to be extended, and that adjacent nodes in a network may appear to have different sizes. It is not possible to distinguish an extended from an unextended node unless the extension of the node is greater than an appreciable fraction of an extinction distance.Keywords
This publication has 8 references indexed in Scilit:
- Observations on dislocation nodes in siliconPhilosophical Magazine, 1965
- The self-stress of dislocations and the shape of extended nodesPhilosophical Magazine, 1964
- Die Stapelfehlerenergie von Germanium und IndiumantimonidPhysica Status Solidi (b), 1964
- Stacking Fault Energy in SiliconJournal of Applied Physics, 1962
- Diffraction contrast of electron microscope images of crystal lattice defects. III. Results and experimental confirmation of the dynamical theory of dislocation image contrastProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Diffraction contrast of electron microscope images of crystal lattice defects - II. The development of a dynamical theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1961
- The angular dislocationPhilosophical Magazine, 1960
- Dislocation interactions in face-centred cubic metals, with particular reference to stainless steelProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959