The effect of crystal defects on the performance of gaas solar cells
- 1 July 1987
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 16 (4) , 295-299
- https://doi.org/10.1007/bf02653369
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dislocation-free GaAs and InP crystals by isoelectronic dopingJournal of Crystal Growth, 1983
- Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property RelationshipJournal of the Electrochemical Society, 1982
- The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting DiodesJournal of the Electrochemical Society, 1979
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973