X-ray photoelectron spectroscopy study of the surface chemistry of freon-oxygen plasma etched silicon
- 1 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (9) , 859-861
- https://doi.org/10.1063/1.94528
Abstract
X-ray photoelectron spectroscopy has been used to study residual film formation on silicon exposed to an oxygen-containing CF4 plasma. Experimental results indicate that the plasma reaction produces a surface phase SixOFy, which varies in thickness with the O content of the plasma. Film thickness is shown to correlate with the previously observed etch rate dependence on oxygen content.Keywords
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