Enhanced high-current VBIC model
- 18 April 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 53 (4) , 1235-1243
- https://doi.org/10.1109/tmtt.2005.845715
Abstract
The widely used vertical bipolar inter-company (VBIC) model for bipolar junction transistor-heterojunction bipolar transistors (HBTs) was modified to incorporate high-current effects. The modified VBIC model keeps all features of the original model and adds new features such as mobile carrier modulation of the base-collector capacitance, high-current Kirk effects, high-current reverse emitter-base injection, and current dependence of the reverse transit time in HBTs. The new model accurately fits the dc I-V characteristics, the bias-dependent transit-time, and S-parameters at active and quasi-saturation region biases. It is shown that the new formulation accurately models the strong current dependence of f/sub t/ and G/sub max/ over a wide range of biases. It also predicts very well the power performance in class-AB operation and at the loading for maximum power-added efficiency and maximum output power. The model also shows good fitting of two-tone linearity characteristics when simulated with the same fundamental and harmonic load conditions as in the measurements.Keywords
This publication has 12 references indexed in Scilit:
- Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Towards a unified method to implement transit-time effects in Pi-topology HBT compact modelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analysis and optimization of third order intermodulation distortion mechanisms in AlGaAs/GaAs heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Parameter extraction and optimization for new industry standard VBIC modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Comparison of hybrid pi and Tee HBT circuit topologies and their relationship to large signal modelingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- VBIC model applicability and extraction procedure for InGap/GaAs HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTsIEEE Transactions on Microwave Theory and Techniques, 2002
- Linearity characteristics of GaAs HBTs and the influence of collector designIEEE Transactions on Microwave Theory and Techniques, 2000
- Physics-based minority charge and transit time modeling for bipolar transistorsIEEE Transactions on Electron Devices, 1999
- A non-quasi-static model of GaInP/AlGaAs HBT for power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997