Quantum well lasers with active region grown by laser-assisted atomic layer epitaxy
- 1 October 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (14) , 1437-1439
- https://doi.org/10.1063/1.103363
Abstract
Laser‐assisted atomic layer epitaxy (LALE) is used to locally deposit device‐quality material for the first time, as demonstrated by successfully fabricating broad‐area lasers with a GaAs quantum well grown in this way. By hybridizing LALE with conventional metalorganic chemical vapor deposition epitaxy, heterostructures are grown which allow characterization of material quality by photoluminescence and capacitance‐voltage measurements. In addition, graded‐index separate‐confinement heterostructure lasers with threshold current densities of 650 A/cm2 for 580‐μm‐long devices were made using the LALE quantum well deposit, while devices made away from the deposit did not lase.Keywords
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