Carbon incorporation in GaAs layer grown by atomic layer epitaxy
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 557-561
- https://doi.org/10.1016/0022-0248(88)90583-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth and characterization of compound semiconductors by atomic layer epitaxyJournal of Crystal Growth, 1986
- Growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Photostimulated molecular layer epitaxyJournal of Vacuum Science & Technology A, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Flow-Rate Modulation Epitaxy of GaAsJapanese Journal of Applied Physics, 1985
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Photoluminescence Study of Carbon Doped Gallium ArsenideJapanese Journal of Applied Physics, 1974