Manipulating InAs island sizes with chemical beam epitaxy growth on GaAs patterns
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 747-753
- https://doi.org/10.1016/s0022-0248(96)01219-5
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structurePhysical Review B, 1995
- Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAsApplied Physics Letters, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Initial growth stage and optical properties of a three-dimensional InAs structure on GaAsJournal of Applied Physics, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985