Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers
- 15 January 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (1) , 27-36
- https://doi.org/10.1016/s0022-0248(99)00524-2
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer LayerJapanese Journal of Applied Physics, 1999
- 1.3 µm continuous-wave operation of GainNAslasers grown by metal organicchemical vapour depositionElectronics Letters, 1999
- Room-temperature pulsed operation of GaAsSb/GaAsvertical-cavity surface-emitting lasersElectronics Letters, 1999
- MOVPE growth of highly strained InGaAs/GaAs quantum wellsJournal of Crystal Growth, 1998
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- Initial growth stage and optical properties of a three-dimensional InAs structure on GaAsJournal of Applied Physics, 1994
- Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion lengthJournal of Crystal Growth, 1993
- Morphological instability in epitaxially strained dislocation-free solid filmsPhysical Review Letters, 1991
- Dislocations in strained-layer epitaxy: theory, experiment, and applicationsMaterials Science Reports, 1991
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991