Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering
- 26 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2669-2671
- https://doi.org/10.1063/1.100192
Abstract
We describe results on a novel geometry of heterojunction bipolar transistor that has been realized by impurity-induced disordering. This structure is fabricated by a method that is compatible with techniques for the fabrication of low threshold current buried-heterostructure lasers. We have demonstrated this compatibility by fabricating a hybrid laser/transistor structure that operates as a laser with a threshold current of 6 mA at room temperature, and as a transistor with a current gain of 5.Keywords
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