S-passivated InP (100)-(1×1) surface prepared by a wet chemical process

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Abstract
A highly stable crystalline S‐passivated InP(100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low‐energy electron diffraction studies show a (1×1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High‐resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum‐cleaved InP surface. A possible structural model is presented.