An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology
- 1 November 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper reports on the design, fabrication and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The amplifier consumes a power of 990 mW at a supply of -5.5 VKeywords
This publication has 6 references indexed in Scilit:
- 3.3 ps SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 60 GHz broadband amplifier in SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyondPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-Frequency Bipolar TransistorsPublished by Springer Nature ,2003
- Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/sIEEE Journal of Solid-State Circuits, 1996
- Analysis and Design of Emitter Followers at High FrequenciesIEEE Transactions on Circuit Theory, 1964