3.3 ps SiGe bipolar technology
- 19 April 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delayIEEE Electron Device Letters, 2003
- SiGe HBTs with cut-off frequency of 350 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SiGe bipolar technology with 3.9 ps gate delayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003