Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy
- 31 August 1999
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (8) , 1547-1553
- https://doi.org/10.1016/s0038-1101(99)00102-1
Abstract
No abstract availableKeywords
Funding Information
- Murata Science Foundation
- Hewlett-Packard Development Company
- Ministry of Education, Culture, Sports, Science and Technology
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