A semiconductor laser with a converging output beam
- 1 May 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 805-806
- https://doi.org/10.1063/1.95889
Abstract
Semiconductor lasers with converging output beams are reported for the first time. The lasers have a low-gain region on the center of the mesa stripe near one cleaved facet. The low-gain region distorts the phase front of the guided light and beam convergence results. The width of the laser beam in the direction parallel to the junction plane decreases with distance from 30 μm at the facet down to 7 μm at 111 μm off the facet. Moreover, the one-dimensional optical power density increases with distance in accordance with the decrease in beam width.Keywords
This publication has 4 references indexed in Scilit:
- Fundamental mode oscillation of a buried ridge waveguide laser arrayApplied Physics Letters, 1984
- Lateral beam collimation of a phased array semiconductor laserApplied Physics Letters, 1982
- Symmetric separate confinement heterostructure lasers with low threshold and narrow beam divergence by m.b.e.Electronics Letters, 1980
- Beam scanning with twin-stripe injection lasersApplied Physics Letters, 1978