Local conduction band offset of GaSb self-assembled quantum dots on GaAs
- 24 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (12) , 1590-1592
- https://doi.org/10.1063/1.118624
Abstract
GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (∼50 nm) lateral dot size. The nanometer resolution of ballistic electron emission microscopy is exploited to image individual dots and measure a local band offset of 0.08±0.02 eV.Keywords
This publication has 11 references indexed in Scilit:
- Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission MicroscopyPhysical Review Letters, 1996
- Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopyApplied Physics Letters, 1996
- Theory of ballistic-electron-emission microscopy of buried semiconductor heterostructuresPhysical Review B, 1996
- Ballistic-Electron-Emission Microscopy: A Nanometer-Scale Probe of Interfaces and Carrier TransportAnnual Review of Materials Science, 1996
- Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructuresApplied Physics Letters, 1996
- Optical investigations of the dynamic behavior of GaSb/GaAs quantum dotsApplied Physics Letters, 1996
- Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer-scale dots on GaAsApplied Physics Letters, 1996
- Radiative recombination in type-II GaSb/GaAs quantum dotsApplied Physics Letters, 1995
- Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolutionPhysics Reports, 1995
- Measurement of heterojunction band offsets using ballistic electron emission microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994