Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution
- 31 March 1995
- journal article
- review article
- Published by Elsevier in Physics Reports
- Vol. 253 (4) , 163-233
- https://doi.org/10.1016/0370-1573(94)00082-e
Abstract
No abstract availableKeywords
This publication has 95 references indexed in Scilit:
- 7. Ballistic Electron Emission MicroscopyMethods in Experimental Physics, 1993
- Correlation of the interfacial structure and electrical properties of epitaxial silicides on SiJournal of Vacuum Science & Technology A, 1992
- Ballistic electron emission microscopy study of PtSi–n-Si(100) Schottky diodesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Structural and electronic properties of the Bi/GaP(110) interfacePhysical Review B, 1991
- Ballistic electron emission in silicide–silicon interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Ballistic electron emission microscopy studies of the NiSi2/Si(111) interfaceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- The Au/CdTe interface: an investigation of electrical barriers by ballistic electron emission microscopySemiconductor Science and Technology, 1990
- On the physics of metal-semiconductor interfacesReports on Progress in Physics, 1990
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982