An outstanding innovation in LP-MOVPE: use of nitrogen as the carrier gas
- 30 June 1995
- journal article
- editorial
- Published by Elsevier in III-Vs Review
- Vol. 8 (3) , 34-39
- https://doi.org/10.1016/0961-1290(95)80236-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A new approach towards low-pressure metalorganic vapor phase epitaxy of (AlGa)As using triethylgallium and dimethylethylaminealaneJournal of Crystal Growth, 1994
- MOVPE growth of GaAs using a N2 carrierJournal of Crystal Growth, 1992
- Gas Purification and Measurement at the PPT LevelJournal of the Electrochemical Society, 1991