Ellipsometric spectra and damage profiles of ion implanted silicon
- 1 May 1986
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 3 (5) , 229-232
- https://doi.org/10.1088/0256-307x/3/5/010
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Multilayer analysis of ion implanted GaAs using spectroscopic ellipsometrySurface and Interface Analysis, 1982
- ELLIPSOMETRIC SPECTRUM AND OPTICAL PROPERTIES OF ION IMPLANTED SILICONActa Physica Sinica, 1981
- Damage profile determination of ion-implanted Si layers by ellipsometryJournal of Applied Physics, 1980
- Theory of optical and microwave properties of microscopically inhomogeneous materialsPhysical Review B, 1977
- Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometrySurface Science, 1975