High-temperature diffusion of sulphur in GaAs

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Abstract
Work is described in which radioactive sulphur was diffused into GaAs at two different temperatures and for different values of sulphur vapour pressure in the diffusion ampoule. The experiments were carried out for two values of ambient arsenic vapour pressure. Diffusion profiles were plotted. The form of the profiles was anomalous, indicating that the diffusion process under study is not a simple one. It is suggested that the anomaly occurs because of a breakdown in the arsenic vacancy equilibrium in the GaAs crystal just below the surface. Graphs of surface concentration against sulphur pressure give information on the solubility of sulphur in GaAs. The likely position of the sulphur donor in the GaAs lattice is discussed in the light of this, and of previous work.

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