Performance and processing line integration of a silicon molecular beam epitaxy system
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 207-219
- https://doi.org/10.1016/0040-6090(90)90415-a
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Mono- and polycrystalline silicon emitters for bipolar transistors grown by molecular beam epitaxyThin Solid Films, 1990
- High-brightness and high-resolution RHEED systemReview of Scientific Instruments, 1989
- Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxyApplied Physics Letters, 1988
- Boron contamination of i n s i t u heated silicon surfacesJournal of Vacuum Science & Technology B, 1987