Mono- and polycrystalline silicon emitters for bipolar transistors grown by molecular beam epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1) , 261-267
- https://doi.org/10.1016/0040-6090(90)90421-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Performance and processing line integration of a silicon molecular beam epitaxy systemThin Solid Films, 1990
- Self-aligned complementary bipolar transistors fabricated with a selective-oxidation maskIEEE Transactions on Electron Devices, 1987