Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K
- 15 November 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (10) , 5210-5216
- https://doi.org/10.1063/1.366385
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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