Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (7) , 1273-1281
- https://doi.org/10.1109/16.293358
Abstract
No abstract availableKeywords
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