Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

1 November 1993

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 40 (11) , 1990-1996
https://doi.org/10.1109/16.239739

Abstract

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10/sup 15/-10/sup 19/ cm/sup -3/. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2*10/sup 19/ cm/sup -3/. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon.

Keywords

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