A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon
- 31 January 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (1) , 5-12
- https://doi.org/10.1016/0038-1101(88)90079-2
Abstract
No abstract availableKeywords
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