Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substrates
- 15 July 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2) , 773-778
- https://doi.org/10.1063/1.337428
Abstract
Optical properties of ZnSe–ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.This publication has 9 references indexed in Scilit:
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