Quasi-ballistic corrections to base transit time in bipolar transistors

1 May 1991

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 6 (5) , 405-407
https://doi.org/10.1088/0268-1242/6/5/017

Abstract

A simple analytic expression is derived for the base transit time of a bipolar transistor that allows for ballistic corrections. Differences with published Monte Carlo results suggest that the standard use of an absorbing boundary at the base-emitter junction in the Monte Carlo method requires closer examination.

Keywords

This publication has 5 references indexed in Scilit:

Quasi-ballistic corrections to base transit time in bipolar transistors
Semiconductor Science and Technology, 1991
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