Non-overlapping super self-aligned BiCMOS with 87 ps low power ECL
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
It is demonstrated that high-speed bipolar and CMOS processes can be merged without compromise on either device. A NOVA (nonoverlapping super self-aligned) structure with an advanced epi/isolation process that reduces parasitic capacitances and resistances is reported. The scheme combines lateral autodoping free epi deposition with a novel fully recessed oxide process. This approach significantly simplifies the isolation process and is an important factor in achieving high speed with a conservative 1.5- mu m design rule. A high-speed frequency divider, a multiplexer, and a demultiplexer operating up to 4.1 GHz, 5.5 Gb/s, and 6.2 Gb/s, respectively, have been fabricated. The results show that NOVA BiCMOS is suitable for Gb/s digital VLSI application.Keywords
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